NTD4965N-35G ON Semiconductor, NTD4965N-35G Datasheet - Page 6

• Manufacturer Part Number: NTD4965N-35G
• Description: MOSFET N-CH 30V 68A IPAK-3
• Manufacturer: ON Semiconductor

Specifications of NTD4965N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1710pF @ 15V
• Power - Max: 1.39W
• Mounting Type: *
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.7 mOhms
• Forward Transconductance Gfs (max / Min): 52 s
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 17.8 A
• Power Dissipation: 1.39 W, 2.6 W, 38.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 17.2 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

L3
L4
b2
e
1
b3
4
2
E
3
b
A
D
0.005 (0.13)
B
*For additional information on our Pb−Free strategy and soldering
M
DETAIL A
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
C
c
0.228
5.80
L2
A
GAUGE
PLANE
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
ROTATED 90 CW
SOLDERING FOOTPRINT*
c2
DETAIL A
H
C
http://onsemi.com
0.244
L
6.20
CASE 369AA−01
L1
ISSUE B
5
6
0.102
2.58
A1
H
0.118
3.00
0.063
1.60
C
SCALE 3:1
Z
SEATING
PLANE
0.243
6.17
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
5. DIMENSIONS D AND E ARE DETERMINED AT THE
6. DATUMS A AND B ARE DETERMINED AT DATUM
inches
mm
Y14.5M, 1994.
MENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
OUTERMOST EXTREMES OF THE PLASTIC BODY.
PLANE H.
STYLE 2:
DIM
A1
b2
b3
c2
L1
L2
L3
L4
PIN 1. GATE
A
b
D
E
H
L
Z
c
e
2. DRAIN
3. SOURCE
4. DRAIN
0.086
0.000
0.025
0.030
0.180
0.018
0.018
0.235
0.250
0.370
0.055
0.035
0.155
MIN
−−−
0.090 BSC
0.108 REF
0.020 BSC
INCHES
0.094
0.005
0.035
0.045
0.215
0.024
0.024
0.245
0.265
0.410
0.070
0.050
0.040
MAX
−−−
MILLIMETERS
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
9.40
1.40
0.89
3.93
MIN
−−−
2.29 BSC
0.51 BSC
2.74 REF
10.41
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
1.78
1.27
1.01
−−−