IPP60R750E6 Infineon Technologies, IPP60R750E6 Datasheet - Page 3

• Manufacturer Part Number: IPP60R750E6
• Description: MOSFET N-CH 600V 5.7A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP60R750E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3.5V @ 170µA
• Gate Charge (qg) @ Vgs: 17.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 373pF @ 100V
• Power - Max: 48W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.68 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant