IPA60R750E6 Infineon Technologies, IPA60R750E6 Datasheet
IPA60R750E6
Manufacturer Part Number
IPA60R750E6
Description
MOSFET N-CH 600V 5.7A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA60R750E6.pdf
(17 pages)
Specifications of IPA60R750E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3.5V @ 170µA
Gate Charge (qg) @ Vgs
17.2nC @ 10V
Input Capacitance (ciss) @ Vds
373pF @ 100V
Power - Max
27W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.68 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.7 A
Power Dissipation
27 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA60R750E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPA60R750E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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Data Sheet may be used in life-support devices or systems and/ or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies failure of such components can reasonably ...