IPP60R600E6 Infineon Technologies, IPP60R600E6 Datasheet - Page 2

• Manufacturer Part Number: IPP60R600E6
• Description: MOSFET N-CH 600V 7.3A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP60R600E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 3.5V @ 200µA
• Gate Charge (qg) @ Vgs: 20.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 100V
• Power - Max: 63W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.54 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 63 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 600.0 mOhm
• Id(max) @ Tc=25°c: 7.3 A
• Idpuls (max): 19.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

600V CoolMOS™ E6 Power Transistor
1
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
•
•
•
•
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the
gate or separate totem poles is generally recommended.
Table 1
1) J-STD20 and JESD22
FinalData Sheet
Parameter
V
R
Q
I
E
Body diode d
Type / Ordering Code
IPD60R600E6
IPP60R600E6
IPA60R600E6
D,pulse
DS
oss
DS(on),max
g,typ
Extremely low losses due to very low FOM R
Very high commutation ruggedness
Easy to use/drive
JEDEC
TO-252)
@
@ 400V
T
j,max
1)
Description
Key Performance Parameters
qualified, Pb-free plating, halogen free (excluding
i
/d
t
Value
650
0.6
20.5
19
1.9
500
Package
PG-TO252
PG-TO220
PG-TO220 FullPAK
Unit
V
nC
A
µJ
A/µs
dson
*Q
g
2
and E
oss
6R600E6
Marking
IPD60R600E6, IPP60R600E6
Related Links
IFX CoolMOS Webpage
IFX Design tools
gate
pin 1
Rev. 2.0, 2010-04-12
IPD60R600E6
drain
pin 2
source
pin 3