MRF8S9170NR3 Freescale Semiconductor, MRF8S9170NR3 Datasheet - Page 12

• Manufacturer Part Number: MRF8S9170NR3
• Description: FET RF N-CH 900MHZ 28V OM780-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9170NR3

• Transistor Type: N-Channel
• Frequency: 920MHz
• Gain: 19.3dB
• Voltage - Rated: 70V
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: OM-780-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

12
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
MRF8S9170NR3
Revision
Refer to the following documents, tools and software to aid your design process.
The following table summarizes revisions to this document.
0
1
Sept. 2009
May 2010
Date
• Initial Release of Data Sheet
• Replaced Case Outline 2021--02, Issue A, with 2021--03, Issue B, p. 1, 9--11. Added 4 exposed source
• Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
tabs at dimension e1 on Sheets 1 and 2. Added dimension e1 0.721″--0.729″ (18.31--18.52 mm) in the
table, revised D1 minimum dimension from 0.730″ (18.54 mm) to 0.720″ (18.29 mm), revised dimension E2
from 0.312″ (7.92 mm) to 0.306″ (7.77 mm), and revised wording of Note 8 on Sheet 3.
device, p. 2
REVISION HISTORY
Description
Freescale Semiconductor
RF Device Data