TSAL7400 Vishay, TSAL7400 Datasheet
TSAL7400
Specifications of TSAL7400
Related parts for TSAL7400
TSAL7400 Summary of contents
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... High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plas- tic packages. In comparison with the standard GaAs on GaAs tech- nology these emitters achieve more than 100 % radi- ant power improvement at a similar wavelength. ...
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... TSAL7400 Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage I = 100 mA Temp. coefficient 100 Reverse current Junction capacitance MHz Optical Characteristics °C, unless otherwise specified amb Parameter Radiant intensity I = 100 mA 1 Radiant power I = 100 mA Temp. coefficient of φ Angle of half intensity ...
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... Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81014 Rev. 1.6, 28-Nov- 12154 Figure 6. Radiant Intensity vs. Forward Current 1000 3 4 13602 Figure 7. Radiant Power vs. Forward Current 80 100 94 7993 Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature TSAL7400 Vishay Semiconductors 1000 100 Forward Current (mA) ...
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... TSAL7400 Vishay Semiconductors 1.25 1.0 0.75 0.5 0. 100 890 940 λ 14291 - Wavelength (nm) Figure 9. Relative Radiant Power vs. Wavelength Package Dimensions in mm www.vishay.com 4 1.0 0.9 0.8 0.7 990 0.6 0.4 14330 Figure 10. Relative Radiant Intensity vs. Angular Displacement 0° 10° 20° 30° 40° ...
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... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81014 Rev. 1.6, 28-Nov-06 and may do so without further notice. TSAL7400 Vishay Semiconductors www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...