OP580 Optek, OP580 Datasheet

Photodetector Transistors Phototransistor

OP580

Manufacturer Part Number
OP580
Description
Photodetector Transistors Phototransistor
Manufacturer
Optek
Datasheet

Specifications of OP580

Maximum Power Dissipation
75 mW
Collector- Emitter Voltage Vceo Max
30 V
Collector-emitter Breakdown Voltage
30 V
Collector-emitter Saturation Voltage
0.4 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Product
Phototransistor
Rise Time
15 us
Package / Case
PLCC-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
OP580
Manufacturer:
SAMSVNG
Quantity:
4 000
Part Number:
OP580DA
Manufacturer:
OPTEK
Quantity:
1 000
Silicon Phototransistor
OP580
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
Features:
Description:
The OP580 is an NPN silicon phototransistor mounted in a miniature SMD package. The device has a flat window
lens, which enables a wide acceptance angle. It is packaged in a plastic leadless chip carrier that is compatible
with most automated mounting equipment. The OP580 is mechanically and spectrally matched to the OP280
infrared LED.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
Wide acceptance angle
Fast response time
Plastic leadless chip carrier (PLCC)
Moisture Sensitivity Level: MSL2 or >
Non-contact position sensing
Datum detection
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Machine automation
Optical encoders
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
Number
OP580
Part
Phototransistor
Ordering Information
Pin #
Sensor
1
2
Transistor
1
2
Collector
Emitter
Viewing
Angle
100°
Issue 1.3
Page 1 of 3
Length
Lead
N/A
05/10

Related parts for OP580

OP580 Summary of contents

Page 1

... Moisture Sensitivity Level: MSL2 or > Description: The OP580 is an NPN silicon phototransistor mounted in a miniature SMD package. The device has a flat window lens, which enables a wide acceptance angle packaged in a plastic leadless chip carrier that is compatible with most automated mounting equipment. The OP580 is mechanically and spectrally matched to the OP280 infrared LED ...

Page 2

... Silicon Phototransistor OP580 Absolute Maximum Ratings Storage Temperature Range Operating Temperature Range Lead Soldering Temperature Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation (T Electrical Characteristics A SYMBOL PARAMETER I On-State Collector Current C(ON) V Collector-Emitter Saturation Voltage CE(SAT) I Collector-Emitter Dark Current CE0 V Collector-Emitter Breakdown Voltage ...

Page 3

... Silicon Phototransistor OP580 Relative On-State Collector Current vs Irradiance 160 Normalized mW/cm E 140 = 5 V, ditions λ = 935 nm 25° 120 100 rradiance (mW/cm Collector-Emitter Dark Current vs Temperature 1000 Conditions mW 10V CE 100 -25 Temperature (°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. ...

Related keywords