BPV11 Vishay, BPV11 Datasheet - Page 4

Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm

BPV11

Manufacturer Part Number
BPV11
Description
Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm
Manufacturer
Vishay
Type
Chipr
Datasheets

Specifications of BPV11

Maximum Power Dissipation
150 mW
Maximum Dark Current
50 nA
Maximum Operating Temperature
+ 100 C
Package / Case
T-1 3/4
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
150mW
Viewing Angle
15°
No. Of Pins
2
Light Current
10mA
Dark Current
50nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Transistor Case Style
T-1 3/4
Current Ic Typ
10mA
Fall Time Tf
3.8µs
Half Angle
15°
Rohs Compliant
Yes
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
10mA
Current - Dark (id) (max)
50nA
Wavelength
850nm
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Svhc
No SVHC (20-Jun-2011)
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Water Clear
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
50nA
Power Dissipation
150mW
Peak Wavelength
850nm
Half-intensity Angle
30deg
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPV11
Manufacturer:
ANPEC
Quantity:
850
Part Number:
BPV11F
Manufacturer:
NEC
Quantity:
15
Company:
Part Number:
BPV11F
Quantity:
3 000
PACKAGE DIMENSIONS in millimeters
Document Number: 81504
Rev. 1.6, 05-Sep-08
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
94 8348
1.0
0.8
0.6
0.4
0.2
0
400
Drawing-No.: 6.544-5188.01-4
Issue:1; 01.07.96
96 12200
600
λ - Wavelength (nm)
Silicon NPN Phototransistor, RoHS Compliant
0.8
800
+ 0.2
For technical questions, contact: detectortechsupport@vishay.com
- 0.1
E
1000
C
0.8
0.8
5
2.54 nom.
0.5
B
+ 0.2
± 0.15
- 0.1
+ 0.2
- 0.1
+ 0.2
- 0.1
Chip position
Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement
94 8248
1.0
0.9
0.8
0.7
0.6
0.5
Area not plane
1.27 nom.
0.4
+ 0.15
0.2
Vishay Semiconductors
0
10°
technical drawings
according to DIN
specifications
20°
www.vishay.com
30°
40°
50°
60°
70°
80°
BPV11
345

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