SFH 205 FA OSRAM Opto Semiconductors Inc, SFH 205 FA Datasheet - Page 4

• Manufacturer Part Number: SFH 205 FA
• Description: Photodiodes PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of SFH 205 FA

• Photodiode Material: Silicon
• Peak Wavelength: 900 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 60 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: TO-92
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.63A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 60uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P1677

Relative Spectral Sensitivity
S
Dark Current
I
Directional Characteristics
S
2007-04-03
R
rel
rel
Ι
=
S
R
4000
3000
2000
1000
rel
=
=
pA
f
100
100
0
50
60
70
80
90
80
70
60
50
40
30
20
10
f
%
(
f
0
0
V
400
(λ)
(ϕ)
R
),
1.0
E = 0
40
600
5
0.8
800
10
30
0.6
1000 nm 1200
15
20
OHF01430
λ
0.4
OHF00080
V
V
R
10
20
ϕ
1.0
0.4
0.8
0.6
0.2
0
0
0
Photocurrent
Open-Circuit Voltage
Capacitance
C
Ι
C
P
=
10
20
μ
10
10
10
10
100
f
A
pF
-1
80
70
60
50
40
30
20
10
10
0
3
2
1
0
10
(
V
0
-2
R
40
),
f
10
10
= 1 MHz,
1
-1
60
I
P
10
10
=
4
V
Ι
80
2
0
O
P
f
(
E
E = 0
μ
e
W/cm
10
100
V
),
1
O
OHF01402
OHF01097
E
V
OHF00081
V
2
e
=
R
V
R
120
f
10
= 5 V
10
(
10
10
10
10
10
mV
4
E
2
4
3
2
1
0
e
)
V
O
Total Power Dissipation
P
Dark Current
I
R
tot
=
P
Ι
tot
=
R
f
mW
10
160
140
120
100
10
10
10
10
nA
80
60
40
20
(
f
0
T
-1
3
2
1
0
(
0
0
T
A
),
A
)
V
20
20
R
= 10 V,
40
40
SFH 205 FA
60
60
E = 0
80 ˚C 100
80 ˚C 100
OHF00394
OHF00082
T
T
A
A