TLP598GAF Toshiba, TLP598GAF Datasheet
TLP598GAF
Specifications of TLP598GAF
Related parts for TLP598GAF
TLP598GAF Summary of contents
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... Telecommunication Data Acquisition Measurement Instrumentation The TOSHIBA TLP598GA consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a six lead plastic DIP package (DIP6). The TLP598GA is a bi-directional switch which can replace mechanical relays in many applications. ...
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Individual Electrical Characteristics Characteristic Forward voltage Reverse current Capacitance Off−state current Capacitance Coupled Electrical Characteristics Characteristic Trigger LED current A connection On−state B connection resistance C connection Isolation Characteristics Characteristic Capacitance input to output Isolation resistance Isolation voltage Switching Characteristics ...
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I – 100 − Ambient temperature T (° – 100 25° 0.5 0.3 0.1 0.6 ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...