1N4448W-V-GS08 Vishay, 1N4448W-V-GS08 Datasheet - Page 4

• Manufacturer Part Number: 1N4448W-V-GS08
• Description: Diodes (General Purpose, Power, Switching) Vr/75V Io/150mA
• Manufacturer: Vishay

Specifications of 1N4448W-V-GS08

• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 2 A
• Max Surge Current: 350 mA
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 620 mV to 720 mV
• Maximum Reverse Leakage Current: 5 uA
• Maximum Power Dissipation: 200 mW
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-323
• Diode Type: Switching
• Forward Current If(av): 150mA
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 500mA
• Diode Case Style: SOD-123
• No. Of Pins: 2
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1N4448W-V
Vishay Semiconductors
Package Dimensions
www.vishay.com
4
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
18106
Cathode bar
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
in millimeters (inches):
0.45 (0.018)
0.25 (0.010)
2.85 (0.112)
2.55 (0.100)
0.5 (0.020) ref.
3.85 (0.152)
3.55 (0.140)
SOD-123
0.85 (0.033)
Mounting Pad Layout
[e-mail]
2.5 (0.098)
0.85 (0.033)
Document Number 85722
Rev. 1.4, 17-Aug-10