PUMH10,115 NXP Semiconductors, PUMH10,115 Datasheet - Page 4

• Manufacturer Part Number: PUMH10,115
• Description: Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PUMH10,115

• Configuration: Dual
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Frequency - Transition: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056189115 PUMH10 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2003 Oct 20
Per transistor
R
Per device
R
Per transistor
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
NPN/NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
th j-a
th j-a
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= 5 mA; I
= 100 μA; V
= 5 mA; V
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0; V
4
CONDITIONS
C
B
C
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
CB
CE
E
B
B
= 0.25 mA
= 0
= 10 mA
amb
amb
CE
= 0
= 0
= 0; T
= 10 V; f = 1 MHz
= 0.3 V
CONDITIONS
= 5 V
≤ 25 °C
≤ 25 °C
j
= 150 °C
−
−
−
−
100
−
−
1.1
1.54
17
−
MIN.
PEMH10; PUMH10
VALUE
625
625
416
416
−
−
−
−
−
−
0.6
0.75
2.2
21
−
TYP.
Product data sheet
100
1
50
180
−
100
0.5
−
2.86
26
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT