TGF2021-02 TriQuint, TGF2021-02 Datasheet - Page 3

• Manufacturer Part Number: TGF2021-02
• Description: RF GaAs DC-12GHz 2mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2021-02

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 750 mS
• Gate-source Breakdown Voltage: - 8 V
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031675

TriQuint Semiconductor Texas: Phone [phone] Fax [phone] [e-mail] www.triquint.com
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
Efficiency Tuned:
θ
(channel to backside of carrier)
Power Tuned:
JC
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
SYMBOL
Thermal Resistance
Γ
Γ
Gain
Gain
Psat
PAE
Psat
PAE
L
L
2/
2/
Parameter
Load Reflection coefficient
Load Reflection coefficient
Saturated Output Power
Saturated Output Power
Power Added Efficiency
Power Added Efficiency
RF CHARACTERIZATION TABLE
PARAMETER
Power Gain
Power Gain
THERMAL INFORMATION
(T
Vd = 12 V
Idq = 150 mA
Pdiss = 1.8 W
A
Test Conditions
= 25 °C, Nominal)
TABLE III
TABLE IV
0.728 ∠ 164.8
Idq = 150mA
0.778 ∠ 155
Vd = 10V
33.8
11.5
50
11
33
59
1/
(
T
148
o
0.725 ∠ 161.1
CH
C)
Idq = 150mA
0.771 ∠ 152.5
Vd = 12V
Product Datasheet
34.5
33.7
48
11
55
11
(°C/W)
43.3
θ
JC
TGF2021-02
UNITS
1.2 E+6
(HRS)
dBm
dBm
dB
dB
%
%
August 7, 2007
T
-
-
M
Rev -
3