BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 2

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF369_4
Product data sheet
1.3 Applications
I
I
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
Type number
BLF369
Symbol
V
V
T
T
stg
j
DS
GS
Pulsed applications up to 500 MHz
Communication transmitter applications in the HF/VHF/UHF band under specific
conditions
Industrial applications up to 500 MHz under special conditions
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Package
Name
-
Rev. 04 — 19 February 2009
Description
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
[1]
Simplified outline
Conditions
Multi-use VHF power LDMOS transistor
1
3
2
4
5
Min
-
-
0.5
65
Graphic symbol
© NXP B.V. 2009. All rights reserved.
BLF369
3
4
Max
65
+13
+150
200
Version
SOT800-2
1
2
sym117
Unit
V
V
C
C
5
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