FZT1053ATA Diodes Inc, FZT1053ATA Datasheet - Page 2

• Manufacturer Part Number: FZT1053ATA
• Description: Bipolar Power NPN High Gain & Crnt
• Manufacturer: Diodes Inc

Specifications of FZT1053ATA

• Continuous Collector Current: 4.5 A
• Maximum Operating Frequency: 140 MHz
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 7.5 V
• Maximum Dc Collector Current: 4.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: 75V
• Power Dissipation Pd: 2.5W
• Dc Collector Current: 4.5A
• Dc Current Gain Hfe: 450
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Switching Times
Transition Frequency
Output Capacitance
FZT1053A
SYMBOL MIN.
V
V
V
V
V
I
I
V
V
V
h
t
t
f
C
CBO
EBO
CES
on
off
T
FE
(BR)CBO
CES
CEO
CEV
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
150
150
75
150
7.5
270
300
300
40
amb
TYP.
250
250
100
250
8.8
0.9
0.3
1.5
21
55
150
160
350
900
825
440
450
450
60
20
162
900
140
21
= 25°C unless otherwise stated).
MAX.
10
10
10
30
75
200
210
440
1000
950
1200
30
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
ns
ns
MHz
pF
UNIT
CONDITIONS.
I
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
V
I
V
I
f=100MHz
V
C
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CC
CB
EB
CES
=2A, I
CC
CB
=100 A
=2A, I
=100 A
=0.2A, I
=0.5A, I
=1A, I
=2A, I
=4.5A, I
=3A, I
=10mA, V
=0.5A, V
=1A, V
=4.5A, V
=10A, V
=50mA, V
=100 A
=10mA
=100 A, V
=3A, V
=50V
=120V
=4V
=50V
=10V, f=1MHz
=120V
B1
B1
B
B
B
CE
=I
=10mA*
=100mA*
=100mA*
CE
=I
B
B
B
CE
B2
CE
=2V*
CE
=20mA*
=20mA*
=200mA*
=2V*
B2
=2V*
CE
CE
= 20mA,
EB
=2V*
=2V*
= 20mA,
=2V*
=10V
=1V