2N6545 Central Semiconductor, 2N6545 Datasheet

Bipolar Power NPN Power SW

2N6545

Manufacturer Part Number
2N6545
Description
Bipolar Power NPN Power SW
Manufacturer
Central Semiconductor
Datasheet

Specifications of 2N6545

Dc Collector/base Gain Hfe Min
12
Maximum Operating Frequency
28 MHz
Minimum Operating Temperature
- 65 C
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-3
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
8 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MAXIMUM RATINGS: (T C =25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Emitter Current
Peak Emitter Current
Continuous Base Current
Peak Base Current
Power Dissipation
Power Dissipation, T C =100°C
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T C =25°C unless otherwise noted)
SYMBOL
I CEV
I CEV
I CER
I EBO
BV CEX
BV CEX
BV CEO
V CE(SAT)
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
POWER TRANSISTOR
TEST CONDITIONS
V CE =Rated V CEV , V BE =1.5V
V CE =Rated V CEV , V BE =1.5V, T C =100°C
V CE =Rated V CEV , R BE =50Ω, T C =100°C
V EB =9.0V
V CL =Rated V CEX , I C =4.5A, T C =100°C
V CL =Rated V CEO -100V, I C =8.0A, T C =100°C
I C =100mA
I C =5.0A, I B =1.0A
I C =8.0A, I B =2.0A
I C =5.0A, I B =1.0A, T C =100°C
I C =5.0A, I B =1.0A
I C =5.0A, I B =1.0A, T C =100°C
V CE =3.0V, I C =2.5A
V CE =3.0V, I C =5.0A
NPN SILICON
TO-3 CASE
2N6544
2N6545
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6544, 2N6545
types are Silicon NPN Triple Diffused Mesa Transistors
designed for high voltage, high current, high speed
switching applications.
MARKING: FULL PART NUMBER
SYMBOL
T J , T stg
V CEO
V CEV
V CEX
V EBO
Θ JC
I CM
I EM
I BM
P D
P D
I C
I E
I B
MIN
350
200
300
7.0
12
-
-
-
-
-
-
-
-
-
2N6544
2N6544
MAX
0.5
2.5
3.0
1.0
1.5
5.0
2.5
1.6
1.6
60
35
650
350
300
-
-
-
-65 to +200
71.5
125
9.0
8.0
8.0
1.4
16
16
32
16
MIN
450
300
400
7.0
2N6545
12
-
-
-
-
-
-
-
-
-
2N6545
w w w. c e n t r a l s e m i . c o m
850
450
400
R1 (7-February 2011)
MAX
0.5
2.5
3.0
1.0
1.5
5.0
2.5
1.6
1.6
60
35
-
-
-
UNITS
UNITS
°C/W
mA
mA
mA
mA
°C
W
W
V
V
V
V
A
A
A
A
A
A
V
V
V
V
V
V
V
V

Related parts for 2N6545

2N6545 Summary of contents

Page 1

... I C =5.0A =1.0A V BE(SAT =5.0A =1.0A =100° =3.0V =2. =3.0V =5. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6544, 2N6545 types are Silicon NPN Triple Diffused Mesa Transistors designed for high voltage, high current, high speed switching applications. MARKING: FULL PART NUMBER SYMBOL 2N6544 2N6545 V CEV ...

Page 2

... NPN SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =10V =300mA, f=1.0MHz =10V =0, f=1.0MHz I s =100V, t=1.0s Resistive Load =250V =5.0A =1.0A =100μ Duty Cycle≤2. Inductive Load (Clamped =Rated V CEX , I C =5.0A =1.0A =5.0V =100° ...

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