2N3725A Central Semiconductor, 2N3725A Datasheet
2N3725A
Manufacturer Part Number
2N3725A
Description
Bipolar Small Signal NPN Fast SW SS
Manufacturer
Central Semiconductor
Datasheet
1.2N3725A.pdf
(2 pages)
Specifications of 2N3725A
Dc Collector/base Gain Hfe Min
15
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-18
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
1.2 A
Power Dissipation
1000 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3725A
Manufacturer:
ST/MOTO
Quantity:
20 000
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Power Dissipation (T C =25°C)
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I B
I B
I CBO
I CBO
I CBO
I CBO
I CES
I CES
BV CBO
BV CES
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V CE(SAT)
V CE(SAT)
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
NPN SILICON TRANSISTOR
TEST CONDITIONS
V CE =50V
V CE =80V
V CB =40V
V CB =40V, T A =100°C
V CB =60V
V CB =60V, T A =100°C
V CE =50V
V CE =80V
I C =10µA
I C =10µA
I C =10mA
I E =10µA
I C =10mA, I B =1.0mA
I C =100mA, I B =10mA
I C =300mA, I B =30mA
I C =500mA, I B =50mA
I C =800mA, I B =80mA
I C =1.0A, I B =100mA
I C =10mA, I B =1.0mA
I C =100mA, I B =10mA
I C =300mA, I B =30mA
I C =500mA, I B =50mA
I C =800mA, I B =80mA
I C =1.0A, I B =100mA
TO-39 CASE
2N3724
2N3725
2N3725A
MIN
0.80
6.0
50
50
30
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3724, 2N3725,
2N3725A types are Silicon NPN Planar Epitaxial
Transistors designed for high voltage, high current,
high speed switching applications.
MARKING: FULL PART NUMBER
SYMBOL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T J , T stg
2N3724
V CBO
V CEO
V EBO
I CM
P D
P D
I C
MAX
0.25
0.20
0.32
0.42
0.65
0.75
0.76
0.86
120
1.7
1.1
1.1
1.5
1.7
10
10
-
-
-
-
-
-
-
-
2N3724
0.8
3.5
0.80
50
30
MIN
6.0
80
80
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2N3725
MAX
0.25
0.26
0.40
0.52
0.80
0.95
0.76
0.86
-65 to +200
120
1.7
1.1
1.1
1.5
1.7
10
10
-
-
-
-
-
-
-
-
2N3725
1.75
6.0
1.2
0.8
3.5
80
50
MIN
0.80
0.90
6.0
80
80
50
2N3725A
w w w. c e n t r a l s e m i . c o m
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2N3725A
R1 (5-December 2010)
1.0
5.0
80
50
MAX
0.25
0.26
0.40
0.52
0.80
0.90
0.76
0.86
0.5
1.0
1.1
1.3
1.4
10
50
10
-
-
-
-
-
-
-
-
UNITS
UNITS
µA
µA
µA
µA
µA
µA
µA
µA
°C
W
W
V
V
V
A
A
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Related parts for 2N3725A
2N3725A Summary of contents
Page 1
... I C =500mA =50mA V BE(SAT =800mA =80mA V BE(SAT =1.0A =100mA DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications. MARKING: FULL PART NUMBER SYMBOL 2N3724 2N3725 2N3725A ...
Page 2
... V CC =30V =500mA =50mA =30V =500mA =50mA =30V =500mA =50mA =30V =500mA =50mA t off V CC =30V =500mA =50mA =30V =1.0A =100mA t off V CC =30V =1.0A =100mA TO-39 CASE - MECHANICAL OUTLINE 2N3724 2N3725 2N3725A MIN MAX MIN MAX MIN MAX 150 60 150 60 150 40 ...