2N3725A Central Semiconductor, 2N3725A Datasheet

Bipolar Small Signal NPN Fast SW SS

2N3725A

Manufacturer Part Number
2N3725A
Description
Bipolar Small Signal NPN Fast SW SS
Manufacturer
Central Semiconductor
Datasheet

Specifications of 2N3725A

Dc Collector/base Gain Hfe Min
15
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-18
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
1.2 A
Power Dissipation
1000 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3725A
Manufacturer:
ST
Quantity:
500
Part Number:
2N3725A
Manufacturer:
ST
0
Part Number:
2N3725A
Manufacturer:
ST/MOTO
Quantity:
20 000
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Power Dissipation (T C =25°C)
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I B
I B
I CBO
I CBO
I CBO
I CBO
I CES
I CES
BV CBO
BV CES
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V CE(SAT)
V CE(SAT)
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
NPN SILICON TRANSISTOR
TEST CONDITIONS
V CE =50V
V CE =80V
V CB =40V
V CB =40V, T A =100°C
V CB =60V
V CB =60V, T A =100°C
V CE =50V
V CE =80V
I C =10µA
I C =10µA
I C =10mA
I E =10µA
I C =10mA, I B =1.0mA
I C =100mA, I B =10mA
I C =300mA, I B =30mA
I C =500mA, I B =50mA
I C =800mA, I B =80mA
I C =1.0A, I B =100mA
I C =10mA, I B =1.0mA
I C =100mA, I B =10mA
I C =300mA, I B =30mA
I C =500mA, I B =50mA
I C =800mA, I B =80mA
I C =1.0A, I B =100mA
TO-39 CASE
2N3724
2N3725
2N3725A
MIN
0.80
6.0
50
50
30
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3724, 2N3725,
2N3725A types are Silicon NPN Planar Epitaxial
Transistors designed for high voltage, high current,
high speed switching applications.
MARKING: FULL PART NUMBER
SYMBOL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T J , T stg
2N3724
V CBO
V CEO
V EBO
I CM
P D
P D
I C
MAX
0.25
0.20
0.32
0.42
0.65
0.75
0.76
0.86
120
1.7
1.1
1.1
1.5
1.7
10
10
-
-
-
-
-
-
-
-
2N3724
0.8
3.5
0.80
50
30
MIN
6.0
80
80
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2N3725
MAX
0.25
0.26
0.40
0.52
0.80
0.95
0.76
0.86
-65 to +200
120
1.7
1.1
1.1
1.5
1.7
10
10
-
-
-
-
-
-
-
-
2N3725
1.75
6.0
1.2
0.8
3.5
80
50
MIN
0.80
0.90
6.0
80
80
50
2N3725A
w w w. c e n t r a l s e m i . c o m
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2N3725A
R1 (5-December 2010)
1.0
5.0
80
50
MAX
0.25
0.26
0.40
0.52
0.80
0.90
0.76
0.86
0.5
1.0
1.1
1.3
1.4
10
50
10
-
-
-
-
-
-
-
-
UNITS
UNITS
µA
µA
µA
µA
µA
µA
µA
µA
°C
W
W
V
V
V
A
A
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

Related parts for 2N3725A

2N3725A Summary of contents

Page 1

... I C =500mA =50mA V BE(SAT =800mA =80mA V BE(SAT =1.0A =100mA DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications. MARKING: FULL PART NUMBER SYMBOL 2N3724 2N3725 2N3725A ...

Page 2

... V CC =30V =500mA =50mA =30V =500mA =50mA =30V =500mA =50mA =30V =500mA =50mA t off V CC =30V =500mA =50mA =30V =1.0A =100mA t off V CC =30V =1.0A =100mA TO-39 CASE - MECHANICAL OUTLINE 2N3724 2N3725 2N3725A MIN MAX MIN MAX MIN MAX 150 60 150 60 150 40 ...

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