CMPT2907A Central Semiconductor, CMPT2907A Datasheet
CMPT2907A
Manufacturer Part Number
CMPT2907A
Description
Bipolar Small Signal PNP Gen Purpose
Manufacturer
Central Semiconductor
Datasheet
1.CMPT2907A.pdf
(2 pages)
Specifications of CMPT2907A
Dc Collector/base Gain Hfe Min
75 at 0.1 mA at 10 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-23
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
3000 PCS T&R
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
I CEV
BV CBO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
h FE
h FE
h FE
f T
C ob
C ib
PNP SILICON TRANSISTOR
SURFACE MOUNT
TEST CONDITIONS
V CB =50V
V CB =50V, T A =125°C
V CE =30V, V EB =0.5V
I C =10µA
I C =10mA
I E =10µA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
V CE =10V, I C =0.1mA
V CE =10V, I C =1.0mA
V CE =10V, I C =10mA
V CE =10V, I C =150mA
V CE =10V, I C =500mA
V CE =20V, I C =50mA, f=100MHz
V CB =10V, I E =0, f=1.0MHz
V BE =2.0V, I C =0, f=1.0MHz
SOT-23 CASE
CMPT2907A
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2907A
type is a PNP silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal general
purpose and switching applications.
MARKING CODE: C2F
SYMBOL
T J , T stg
V CBO
V CEO
V EBO
Θ JA
MIN
100
100
100
200
P D
5.0
I C
60
60
75
50
-65 to +150
MAX
600
350
357
300
5.0
0.4
1.6
1.3
2.6
8.0
60
60
10
10
50
30
w w w. c e n t r a l s e m i . c o m
R5 (1-February 2010)
UNITS
UNITS
°C/W
MHz
mW
mA
nA
µA
nA
pF
pF
°C
V
V
V
V
V
V
V
V
V
V
Related parts for CMPT2907A
CMPT2907A Summary of contents
Page 1
... V CE =20V =50mA, f=100MHz =10V =0, f=1.0MHz =2.0V =0, f=1.0MHz DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: C2F SYMBOL ...
Page 2
... CMPT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =30V =0.5V =150mA =15mA =30V =0.5V =150mA =15mA =30V =0.5V =150mA =15mA t off V CC =6.0V =150mA =15mA =6.0V =150mA =15mA =6.0V =150mA =15mA SOT-23 CASE - MECHANICAL OUTLINE ...