SI4168DY-T1-GE3 Vishay, SI4168DY-T1-GE3 Datasheet

MOSFET Power 30V 24A 5.7W

SI4168DY-T1-GE3

Manufacturer Part Number
SI4168DY-T1-GE3
Description
MOSFET Power 30V 24A 5.7W
Manufacturer
Vishay
Datasheet

Specifications of SI4168DY-T1-GE3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0057 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
90 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Continuous Drain Current Id
16A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.6mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Power Dissipation Pd
5.7W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4168DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
5 000
Part Number:
SI4168DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
256
Part Number:
SI4168DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4168DY-T1-GE3
Quantity:
70 000
Company:
Part Number:
SI4168DY-T1-GE3
Quantity:
70 000
Part Number:
SI4168DY-T1-GE3(4168)
Manufacturer:
GPI
Quantity:
2
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69005
S-82668-Rev. A, 03-Nov-08
Ordering Information: Si4168DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
C
G
S
S
S
= 25 °C.
0.0076 at V
0.0057 at V
1
2
3
4
R
DS(on)
Top View
SO-8
GS
GS
J
(Ω)
= 150 °C)
= 4.5 V
= 10 V
b, f
N-Channel 30-V (D-S) MOSFET
8
7
6
5
D
D
D
D
I
D
24
21
(A)
Steady State
a
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
13.8 nC
g
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
100 % UIS Tested
Notebook DC/DC
Typical
35
18
g
Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
2.1
2.5
1.6
Limit
16
14
± 20
19.4
4.7
5.7
3.6
30
24
70
35
61
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
50
22
Vishay Siliconix
Si4168DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI4168DY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4168DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4168DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage 7 Total Gate Charge (nC) g Gate Charge Document Number: 69005 S-82668-Rev. A, 03-Nov- 1 Si4168DY Vishay Siliconix 1.2 1.0 0 °C C 0.6 0 125 °C C 0.2 0.0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2400 C 1800 iss 1200 600 C oss C rss ...

Page 4

... Si4168DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.025 0.020 °C J 0.015 0.010 ° ...

Page 5

... T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4168DY Vishay Siliconix 125 150 2.0 1.6 1.2 0.8 0.4 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 125 150 ...

Page 6

... Si4168DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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