FDMC2514SDC Fairchild Semiconductor, FDMC2514SDC Datasheet - Page 5

• Manufacturer Part Number: FDMC2514SDC
• Description: MOSFET Power 25V NChan Dual Cool PowerTrench SyncFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC2514SDC

• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Forward Transconductance Gfs (max / Min): 122 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 24 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC2514SDC Rev.C2
Typical Characteristics
0.01
300
100
0.1
10
10
30
10
1
8
6
4
2
0
1
0.01
Figure 7.
0.01
0
THIS AREA IS
LIMITED BY r
I
SINGLE PULSE
T
R
T
D
Figure 9.
J
A
θ
Figure 11.
= 22.5 A
JA
= MAX RATED
= 25
4
= 105
V
o
Switching Capability
C
DS
Gate Charge Characteristics
t
0.1
0.1
o
, DRAIN to SOURCE VOLTAGE (V)
AV
8
C/W
Operating Area
DS(on)
Unclamped Inductive
, TIME IN AVALANCHE (ms)
T
Q
J
g
Forward Bias Safe
= 125
, GATE CHARGE (nC)
12
V
DD
o
C
T
= 10 V
16
J
1
1
= 25
T
o
J
V
20
C
DD
= 25 °C unless otherwise noted
T
J
= 13 V
= 100
10
24
10
V
o
DD
C
= 16 V
28
10 ms
100 us
100 ms
1ms
1 s
10 s
DC
100
100
32
5
2000
1000
120
100
3000
1000
0.5
80
40
10
100
0
Figure 10. Maximum Continuous Drain
1
60
10
25
0.1
-4
Figure 12. Single Pulse Maximum
Limited by Package
f = 1 MHz
V
Figure 8.
GS
Current vs Case Temperature
10
= 0 V
V
GS
-3
V
50
DS
= 4.5 V
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
C
10
t, PULSE WIDTH (sec)
,
Capacitance vs Drain
CASE TEMPERATURE (
-2
V
GS
75
= 10 V
10
1
-1
1
100
SINGLE PULSE
R
T
R
A
θ
θ
10
JA
JC
o
= 25
C )
= 105
= 2.1
125
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o
10
C
100
C
o
C
o
C/W
C
C/W
oss
rss
iss
1000
150
30