ZXMN6A11GTA Diodes Inc, ZXMN6A11GTA Datasheet - Page 7

• Manufacturer Part Number: ZXMN6A11GTA
• Description: MOSFET Power 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A11GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 4.6 ns
• Rise Time: 3.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package Outline Dimensions
Suggested Pad Layout
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
DIM
A1
A2
b2
A
C
b
0.02
1.55
0.66
2.90
0.23
Min
-
Millimeters
Max
1.80
0.10
1.65
0.84
3.10
0.33
0.0008
0.0610
0.026
0.114
0.009
Min
-
0.079
2.0
Inches
0.079
2.0
0.059
0.0649
0.071
0.004
0.033
0.122
0.013
1.5
Max
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0.15
3.8
DIM
E1
e1
0.091
D
E
e
L
2.3
0.248
0.90
6.30
6.70
3.30
inches
Min
6.3
mm
Millimeters
2.30 BSC
4.60 BSC
Diodes Incorporated
A Product Line of
Max
6.70
7.30
3.70
-
0.248
0.264
0.130
0.355
Min
ZXMN6A11G
0.0905 BSC
0.181 BSC
Inches
© Diodes Incorporated
October 2010
0.264
0.287
0.146
Max
-