SI7336ADP-T1-GE3 Vishay, SI7336ADP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7336ADP-T1-GE3
• Description: MOSFET Power 30V 30A 5.4W 3.0mohm @ 10V
• Manufacturer: Vishay

Specifications of SI7336ADP-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.003 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 5400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 5.4W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si7336ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.1
0.4
0.2
0.0
2
1
- 50
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
0
Threshold Voltage
I
10
T
D
J
= 250 µA
-3
2 5
- Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
5 0
0.01
100
0.1
10
0.01
7 5
1
10
by R
Limited
* V
-2
Safe Operating Area, Junction-to-Case
100
GS
DS(on)
> minimum V
V
125
*
DS
0.1
Single Pulse
Square Wave Pulse Duration (s)
T
- Drain-to-Source Voltage (V)
C
150
= 25 °C
10
GS
-1
at which R
1
DS(on)
10
is specified
1
200
160
120
80
40
0
0.001
1 ms
10 ms
100 ms
1 s
10 s
DC
100
0.01
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
- T
A
t
1
= P
Time (s)
t
2
DM
0.1
S-80440-Rev. F, 03-Mar-08
Z
Document Number: 73152
thJA
100
th J A
t
t
1
2
(t)
= 50 °C/W
1
600
10