ZVN2106GTA Diodes Inc, ZVN2106GTA Datasheet

MOSFET Power N-Chnl 60V T/R

ZVN2106GTA

Manufacturer Part Number
ZVN2106GTA
Description
MOSFET Power N-Chnl 60V T/R
Manufacturer
Diodes Inc
Datasheet

Specifications of ZVN2106GTA

Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.71 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Continuous Drain Current Id
700mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZVN2106GTA
Manufacturer:
NSC
Quantity:
560
Part Number:
ZVN2106GTA
Manufacturer:
DIODES
Quantity:
6 000
Part Number:
ZVN2106GTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – NOVEMBER 1995
FEATURES
*
*
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source Voltage
PARAMETER
Drain-Source Breakdown Voltage
Gate-Body Leakage
On-State Drain Current (1)
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Gate-Source Threshold Voltage
Zero Gate Voltage Drain Current
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
ReverseTransfer Capacitance(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
60 Volt V
R
DS(on)
=2
DS
amb
=25°C
ZVP2106G
ZVN2106
amb
=25°C
SYMBOL MIN. MAX. UNIT CONDITIONS.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
3 - 385
amb
V
SYMBOL
V
I
I
P
T
60
0.8
2
300
D
DM
tot
j
DS
GS
= 25°C unless otherwise stated).
:T
stg
2.4
20
500
100
2
75
45
20
7
8
12
15
V
V
nA
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
-55 to +150
I
I
V
V
V
T=125°C
V
V
V
V
V
D
D
VALUE
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
=1mA, V
710
2.0
60
ZVN2106G
=60 V, V
=48 V, V
=18V, V
=18V,I
=18 V, V
= 20V, V
=10V,I
8
20
18V, I
D
(2)
D
D
GS
DS
=1A
=1A
D
GS
GS
GS
GS
=1A
=0V
= V
DS
=10V
=0
=0V,
=0V, f=1MHz
=0V
GS
G
UNIT
mA
W
°C
V
A
V
D
S

Related parts for ZVN2106GTA

ZVN2106GTA Summary of contents

Page 1

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt DS(on) COMPLEMENTARY TYPE - PARTMARKING DETAIL - ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed ...

Page 2

ZVN2106G TYPICAL CHARACTERISTICS Drain Source Voltage (Volts) DS Saturation Characteristics 100 -Drain Source Voltage (Volts) DS Capacitance v drain-source voltage ...

Related keywords