VND5N07-E STMicroelectronics, VND5N07-E Datasheet - Page 7

• Manufacturer Part Number: VND5N07-E
• Description: MOSFET Power N-Ch 70V 5A OmniFET
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND5N07-E

• Minimum Operating Temperature: - 40 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 70 V
• Continuous Drain Current: 5 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 200 mOhm
• Current - Output / Channel: -
• Current - Peak Output: 5A
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VND5N07
2.3
Electrical characteristics
T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
Table 6.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
Symbol
Symbol
Symbol
case
V
R
V
V
V
g
C
CLAMP
I
DS(on)
I
CLTH
DSS
IN(th)
fs
INCL
ISS
OSS
(1)
= 25°C unless otherwise stated.
Drain-Source clamp
voltage
Drain-Source
threshold voltage
Supply current from
input pin
Input-Source reverse
clamp voltage
Zero input voltage
drain current
(V
Static Drain-Source
on resistance
Input threshold
voltage
Forward
transconductance
Output capacitance
IN
Off
On
Dynamic
=0V)
Parameter
Parameter
Parameter
(1)
V
V
V
I
V
V
IN
V
V
IN
IN
DS
DS
DS
DS
DS
= 1mA
= 0V; I
= 0V; I
= 0V; V
= 13V; V
= 25V; V
V
= 13V; I
= 13V; f = 1MHz; V
DS
V
V
IN
Test conditions
Test conditions
IN
= V
Test conditions
D
D
=10V; I
= 5V; I
IN
= 200mA
= 2mA
in
IN
IN
D
; I
= 10V
= 2.5A
= 0V;
= 0V
D
+ I
D
D
= 2.5A;
= 2.5A
in
= 1 mA
IN
= 0V
Min.
Min.
Min.
-1.0
0.8
Electrical specifications
60
55
3
Typ.
Typ.
Typ.
250
200
70
4
Max.
Max.
Max.
-0.3
500
200
200
280
300
80
50
3
Unit
Unit
Unit
mΩ
µA
µA
µA
pF
S
V
V
V
V
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