IRF9Z24SPBF Vishay, IRF9Z24SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF9Z24SPBF
• Description: MOSFET Power P-Chan 60V 11 Amp
• Manufacturer: Vishay

Specifications of IRF9Z24SPBF

• Transistor Polarity: P-Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Voltage Vgs Max: 20V
• Transistor Case Style: D2-PAK
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Fall Time: 29 ns
• Rise Time: 68 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91091
S10-1728-Rev. B, 02-Aug-10
91091_02
91091_01
10
10
10
10
1
0
1
0
10
10
-1
Bottom
-1
Top
Bottom
Top
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS ,
V
DS
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
175 °C
25 °C
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
10
10
- 4.5 V
1
- 4.5 V
1
91091_03
91091_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 11 A
= - 10 V
- V
5
T
GS ,
J ,
Junction Temperature (°C)
25
Gate-to-Source Voltage (V)
°
6
C
7
Vishay Siliconix
175
20 µs Pulse Width
V
°
8
DS
C
= -
25 V
www.vishay.com
9
10
3