FDMC3020DC Fairchild Semiconductor, FDMC3020DC Datasheet - Page 2

• Manufacturer Part Number: FDMC3020DC
• Description: MOSFET Power 30V NChan Dual Cool PowerTrench SyncFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC3020DC

• Gate Charge Qg: 15.5 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC3020DC Rev.C3
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
GS
DS
GS
= 12 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= ±20 V, V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 1.9 A
D
= 12 A
= 12 A
GS
GEN
GS
= 250 μA
GS
= 12 A,
= 12 A
= 12 A, T
DS
= 10 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 12 A
J
= 15 V,
(Note 2)
= 125 °C
(Note 2)
Min
1.0
30
1038
0.82
0.73
513
15.5
0.9
Typ
1.9
5.0
7.2
7.5
87
7.1
2.5
25
44
19
-6
9
17
9
3
2
3
1385
±100
6.25
Max
685
135
10.6
1.3
1.2
3.0
9.0
9.1
45
18
18
10
35
10
23
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1
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
μA
nA
nC
nC
nC
nC
ns
Ω
ns
ns
ns
ns
V
V
S
V