S29GL512P11TFI010 Spansion Inc., S29GL512P11TFI010 Datasheet - Page 38

Flash 3V 512Mb Mirrorbit highest address110ns

S29GL512P11TFI010

Manufacturer Part Number
S29GL512P11TFI010
Description
Flash 3V 512Mb Mirrorbit highest address110ns
Manufacturer
Spansion Inc.

Specifications of S29GL512P11TFI010

Memory Type
NOR
Memory Size
512 Mbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Uniform
Interface Type
Page-mode
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
56
Cell Type
NOR
Density
512Mb
Access Time (max)
110ns
Boot Type
Not Required
Address Bus
26/25Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
64M/32M
Supply Current
110mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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36
7.9.3
Software Reset
Note
Hardware reset operation during embedded erase is not recommended; permanent device damage may
result.
Software reset is part of the command set (see
read mode and must be used for the following conditions:
Software Functions and Sample Code
Note
Base = Base Address.
The following is a C source code example of using the reset function. Refer to the Spansion Low Level Driver
User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software
development guidelines.
The following are additional points to consider when using the reset command:
/* Example: Reset (software reset of Flash state machine) */
This command resets the sectors to the read and address bits are ignored.
Reset commands are ignored once erasure has begun until the operation is complete.
Once programming begins, the device ignores reset commands until the operation is complete
The reset command may be written between the cycles in a program command sequence before
programming begins (prior to the third cycle). This resets the sector to which the system was writing to the
read mode.
If the program command sequence is written to a sector that is in the Erase Suspend mode, writing the
reset command returns that sector to the erase-suspend-read mode.
The reset command may be also written during an Autoselect command sequence.
If a sector has entered the Autoselect mode while in the Erase Suspend mode, writing the reset command
returns that sector to the erase-suspend-read mode.
If DQ1 goes high during a Write Buffer Programming operation, the system must write the "Write to Buffer
Abort Reset" command sequence to RESET the device to reading array data. The standard RESET
command does not work during this condition.
To exit the unlock bypass mode, the system must issue a two-cycle unlock bypass reset command
sequence [see command table for details].
1. to exit Autoselect mode
2. when DQ5 goes high during write status operation that indicates program or erase cycle was not
3. exit sector lock/unlock operation.
4. to return to erase-suspend-read mode if the device was previously in Erase Suspend mode.
5. after any aborted operations
*( (UINT16 *)base_addr + 0x000 ) = 0x00F0;
successfully completed
Reset Command
Cycle
D a t a
S29GL-P MirrorBit
S h e e t
Operation
(LLD Function = lld_ResetCmd)
Write
Table 7.18 Reset
( A d v a n c e
TM
Table 12.1 on page
Flash Family
Byte Address
Base + xxxh
I n f o r m a t i o n )
61) that also returns the device to array
Word Address
Base + xxxh
S29GL-P_00_A3 November 21, 2006
00F0h
Data

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