ZXGD3001E6TA Diodes Inc, ZXGD3001E6TA Datasheet

MOSFET & Power Driver ICs 9A Gate Driver Mosfet

ZXGD3001E6TA

Manufacturer Part Number
ZXGD3001E6TA
Description
MOSFET & Power Driver ICs 9A Gate Driver Mosfet
Manufacturer
Diodes Inc
Type
High Speedr
Datasheet

Specifications of ZXGD3001E6TA

Rise Time
141.5 ns
Fall Time
151 ns
Maximum Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Drivers
1
Number Of Outputs
1
Package / Case
SOT23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ZXGD3001E6
9A(peak) Gate driver in SOT23-6
General description
The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A
into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation
delay times down to 3ns and rise/fall times down to 11ns this device ensures rapid switching of the
power MOSFET or IGBT to minimize power losses and distortion in high current fast switching
applications.
The ZXGD3001E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage
range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low input voltage requirement and high current gain allows high current driving from low voltage
controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases
board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Features
Typical application circuit
Issue 1 - October 2007
© Zetex Semiconductors plc 2007
12V operating voltage range
9 Amps peak output current
Fast switching emitter-follower configuration
Low input current requirement
SOT23-6 package
Separate source and sink outputs for independent control of rise and fall time
Optimized pin-out to ease board layout and minimize trace inductance
No Latch Up
No shoot through
Near - Zero quiescent and output leakage current
3ns propagation delay time
11ns rise/fall time, 1000pF load
4.2A(source)/2.2A(sink) output current from 10mA input
Input
Input
IN
IN
2
1
ZXGD3001
V
GND
CC
V
CC
1
SOURCE
SINK
V
S
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ZXGD3001E6TA Summary of contents

Page 1

ZXGD3001E6 9A(peak) Gate driver in SOT23-6 General description The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical ...

Page 2

... GND Ground SOURCE Source current output. SINK Sink current output. Ordering information DEVICE Reel size (inches) ZXGD3001E6TA Device marking 3001 Issue 1 - October 2007 © Zetex Semiconductors plc 2007 Tape width Quantity (mm) per reel 7 8 embossed 2 ZXGD3001E6 ...

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Absolute maximum ratings Parameter Supply voltage Input voltage (c) Peak sink current Source current @ IN1 IN2 Sink current @ =10mA IN1 IN2 (c) Input current Power dissipation at T =25°C A Linear derating ...

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Electrical characteristics (at T Parameter Output voltage, high Output voltage, low Source output leakage current Sink output leakage current Quiescent current Source output current Sink output current Source output current Sink output current Source output current Sink output current Gate ...

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Typical gate driver characteristics Issue 1 - October 2007 © Zetex Semiconductors plc 2007 ZXGD3001E6 5 www.zetex.com ...

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Issue 1 - October 2007 © Zetex Semiconductors plc 2007 ZXGD3001E6 6 www.zetex.com ...

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SOT23-6 Package outline DIM Min. A 0.90 A1 0.00 A2 0.90 b 0.35 C 0.09 D 2.70 E 2.20 E1 1. 0° Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue ...

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Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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