ZXGD3101T8TA Diodes Inc, ZXGD3101T8TA Datasheet - Page 9

• Manufacturer Part Number: ZXGD3101T8TA
• Description: MOSFET & Power Driver ICs SYNCHRNS RCTFR CTRLR FOR FLYBCK CNVRTRS
• Manufacturer: Diodes Inc
• Type: High Side/Low Sider

Specifications of ZXGD3101T8TA

• Rise Time: 305 ns
• Fall Time: 20 ns
• Supply Voltage (min): 5 V
• Supply Current: 8 mA
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 15 ns
• Maximum Turn-on Delay Time: 525 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Number Of Outputs: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical characteristics
Component selection
It is advisable to decouple the ZXGD3101 closely to V
peak gate currents with C1 in Figure 2.
The proper selection of external resistors R
operation. Select a value for resistor R
R
provides a recommended typical offset voltage of -20mV.
External gate resistors are optional. They can be inserted to control the rise times which may help
with EMI issues, power supply consumption issues or dissipation within the part.
R
R
Layout considerations
The Gate pins should be as close to the MOSFET Gate as possible. Also the ground return loop
should be as short as possible. The decoupling capacitor should be close to the V
pin, and should be a X7R type.
For more detailed information refer to application note AN54.
Issue 4 - January 2009
© Diodes Incorporated 2009
BIAS
REF
BIAS
= (V
must then be 0.6 times the value of R
= (V
CC
CC
-0.7V)/ 0.003
-0.7V)/ 0.005
REF
to give a reference current, I
REF
REF
to give a bias current, I
9
and R
CC
BIAS
and ground due to the possibility of high
is important to the optimum device
BIAS
REF
ZXGD3101T8
, of ~3mA. The value of
, of 1.6 times I
www.diodes.com
CC
www.zetex.com
and Ground
REF
. This