NTE6086 NTE ELECTRONICS, NTE6086 Datasheet
NTE6086
Manufacturer Part Number
NTE6086
Description
Replacement Semiconductors 100V2A RECTIFIER
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE6086.pdf
(2 pages)
Specifications of NTE6086
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
10A
Forward Voltage Vf Max
700mV
Diode Configuration
Dual Common Cathode
Diode Type
Schottky
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky
Barrier principle with a platinum barrier metal.
Features:
D 20 Amps Total (10 Amps Pre Diode Leg)
D Guarding for Stress Protection
D Low Forward Voltage
D +150°C Operating Junction Temperature
D Guaranteed Reverse Avalanche
Absolute Maximum Ratings (Per Diode Leg):
Peak Repetitive Reverse Voltage, V
Working Peak Reverse Voltage, V
DC Blocking Voltage, V
Average Rectified Forward Current (V
Peak Repetitive Forward Current (V
Non−Repetitive Peak Surge Current, I
Peak Repetitive Reverse Current (2μs, 1kHz), I
Operating Junction Temperature Range, T
Storage Temperature Range, T
Voltage Rate of Change (V
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient, R
Electrical Characteristics (Per Diode Leg): (Note 1)
Note 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%.
Instantaneous Forward Voltage
Instantaneous Reverse Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz)
Parameter
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
Silicon Dual Schottky Rectifier
= 100V), dv/dt
stg
RWM
100V, 10 Amp, TO220
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
R
v
i
R
= 100V, Square Wave, 20kHz, T
R
FSM
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
NTE6086
i
i
i
i
V
V
F
F
F
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
R
thJA
= 10A, T
= 10A, T
= 20A, T
= 20A, T
= 100V, T
= 100V, T
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
= +133°C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
C
C
= +125°C
= +25°C
= +125°C
= +25°C
C
C
= +125°C
= +25°C
F(AV)
. . . . . . . . . . . . . . . . . . . . . .
C
= +133°C), I
Min
−
−
−
−
−
−
Typ
. . . . . . . . . .
−
−
−
−
−
−
−65° to +150°C
−65° to +175°C
FRM
Max Unit
0.70
0.80
0.85
0.95
0.15
150
1000V/μs
. . . .
60°C/W
2°C/W
150A
100V
100V
100V
mA
mA
0.5A
V
V
V
V
10A
20A
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NTE6086 Summary of contents
Page 1
... Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features Amps Total (10 Amps Pre Diode Leg) D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature ...
Page 2
Dia Max .110 (2.79) .392 (9.95) .6.08 (15.42) Max A K .500 (12.7) Min .185 (4.7) .245 (6.22) .269 (6.83) K Max .040 (1.02) A .100 (2.54) .054 (1.38) .018 (0.48) ...