NTE288 NTE ELECTRONICS, NTE288 Datasheet - Page 2

Replacement Semiconductors TO-92 PNP HIV GP AMP

NTE288

Manufacturer Part Number
NTE288
Description
Replacement Semiconductors TO-92 PNP HIV GP AMP
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE288

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-300V
Transition Frequency Typ Ft
50MHz
Power Dissipation Pd
625mW
Dc Collector Current
500mA
Dc Current Gain Hfe
25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
Current Gain – Bandwidth Product
Collector–Base Capacitance
NTE287
NTE288
NTE288
NTE287 & NTE288
NTE287
Parameter
.105 (2.67) Max
.205 (5.2) Max
.100 (2.54)
(5.33)
(12.7)
.210
Max
.500
Min
Symbol
V
V
300 s, Duty Cycle
CE(sat)
BE(sat)
h
C
f
FE
T
cb
A
E B C
= +25 C unless otherwise specified)
I
I
I
I
I
I
V
C
C
C
C
C
C
CB
= 1mA, V
= 10mA, V
= 30mA, V
= 20mA, I
= 20mA, I
= 10mA, V
= 20V, I
Test Conditions
.050 (1.27)
CE
B
B
E
.135 (3.45) Min
CE
(4.2)
.165
CE
CE
Max
.105 (2.67) Max
= 2mA
= 2mA
= 0, f = 1MHz
2%.
= 10V
= 20V, f = 100MHz
= 10V
= 10V
Seating Plane
.021 (.445) Dia Max
Min Typ Max Unit
25
40
40
25
50
0.5
0.9
3
6
MHz
pF
pF
V
V

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