NTE6409 NTE ELECTRONICS, NTE6409 Datasheet - Page 2

• Manufacturer Part Number: NTE6409
• Description: Replacement Semiconductors TO-18 UNIJUNCT TRANS
• Manufacturer: NTE ELECTRONICS

Specifications of NTE6409

• Repetitive Peak Forward Current Itrm: 2A
• Peak Emitter Current: 1µA
• Valley Current Iv: 10mA
• Power Dissipation Pd: 300mW
• Operating Temperature Range: -65°C To +125°C
• No. Of Pins: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics: (T
Note 3. Intrinsic Standoff Ratio, , is defined by the equation:
Note 4. Use pulse techniques: PW [ 300 s, Duty Cycle
Intrinsic Standoff Ratio
Interbase Resistance
Interbase Resistance
Emitter Saturation Voltage
Modulated Interbase Current I
Emitter Reverse Current
Peak Point Emitter Current
Valley Point Current
Base–One Peak Pulse
Temperature Coefficient
Voltage
Parameter
base modulation which may result in erroneous readings.
Where: V
V
V
P
B2B1
F
=
= Emitter to Base–One Junction Diode Drop ([ 0.45V @ 10 A)
= Peak Point Emitter Voltage
V
V
P
= Interbase Voltage
B2B1
– V
V
Symbol
F
B2(mod)
EB1(sat)
I
V
EB2O
r
OB1
BB
r
I
I
A
P
V
BB
= +25 C unless otherwise specified)
Emitter
.210 (5.33)
V
V
V
V
V
V
V
V
(12.7)
B2B1
.500
B2B1
B2B1
B2B1
B2B1
B2E
B2B1
B2B1
Max
Min
45
= 30V, I
= 3V, I
= 10V, Note 3
= 3V, I
= 10V, I
= 10V, I
= 25V
= 20V, R
.041 (1.05)
Test Conditions
E
E
B1
= 0, T
E
E
= 0
B2
= 50mA, Note 4
= 50mA
= 0
.018 (0.45)
= 100 , Note 4
A
Base 1
Base 2/Case
.230 (5.84) Dia Max
.195 (4.95) Dia Max
= –55 to +125 C
.030 (.762) Max
2% to avoid internal heating due to inter-
0.68
Min
4.7
0.1
–
–
–
–
8
6
0.005
Typ
7.0
3.5
15
10
–
–
1
7
Max Unit
0.82
9.1
0.9
0.2
18
–
–
2
–
%/ C
mA
mA
k
V
V
A
A