TISP4P025L1NR-S Bourns Inc., TISP4P025L1NR-S Datasheet - Page 2

Surge Suppressors Low Capacitance Overvoltage Protect.

TISP4P025L1NR-S

Manufacturer Part Number
TISP4P025L1NR-S
Description
Surge Suppressors Low Capacitance Overvoltage Protect.
Manufacturer
Bourns Inc.
Datasheet

Specifications of TISP4P025L1NR-S

Voltage Rating
25 V
Current Rating
30 A
Termination Style
SMD/SMT
Package / Case
SOT-23-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Repetitive peak off-state voltage
Non-repetitive peak impulse current (see Notes 1, 2 and 3)
Junction temperature
Storage temperature range
NOTES: 1. Initially the device must be in thermal equilibrium with T
V
I
Absolute Maximum Ratings, T
Electrical Characteristics, T
DRM
C
ΔC
(BO)
I
H
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
O
TISP4P0xxL1N Overvoltage Protector Series
2. The surge may be repeated after the device returns to its initial conditions.
3. Rated currents only apply if pins 1 & 5 (Tip) are connected together and pins 3 & 4 (Ring) are connected together.
Repetitive peak off-state current
Off-state capacitance
P
Delta-capacitance
Breakover voltage
a
Holding current
a r
m
t e
r e
A
= 25 °C (Unless Otherwise Noted)
A
= 25 °C (Unless Otherwise Noted)
R
V
dv/dt = ±250 V/ms, R
I
f = 1 MHz, V
f = 1 MHz, V
T
D
t a
=
= V
n i
±
g
5
DRM
, A
d
/ i
d
d
t d
= 1 V rms, V
= 1 V rms, V
=
±
3
J
0
= 25 °C.
SOURCE
m
/ A
T
e
m
t s
D
D
s
= 2 V
= 1 V to V
C
= 300 Ω
o
Customers should verify actual device performance in their specifi c applications.
n
d
t i
o i
n
DRM
s
‘4P015L1N
‘4P020L1N
‘4P025L1N
‘4P035L1N
‘4P015L1N
‘4P020L1N
‘4P025L1N
‘4P035L1N
‘4P015L1N
‘4P020L1N
‘4P025L1N
‘4P035L1N
‘4P015L1N
‘4P020L1N
‘4P025L1N
‘4P035L1N
‘4P015L1N
‘4P020L1N
‘4P025L1N
‘4P035L1N
Specifi cations are subject to change without notice.
S
V
I
y
PPSM
T
m
DRM
T
stg
J
b
l o
M
n i
-40 to +150
-65 to +150
±30
y T
±
±10
±30
V
6.5
5.5
3.5
2.5
6
2
3
2
±12
±16
±24
±30
±18
3
a
±8
p
0
u l
e
M
±15
±20
±25
±35
OCTOBER 2009
±1
a
x
U
U
°C
°C
m
µA
V
A
pF
pF
n
V
n
t i
A
t i

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