FQD8P10TM_F085 Fairchild Semiconductor, FQD8P10TM_F085 Datasheet

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FQD8P10TM_F085

Manufacturer Part Number
FQD8P10TM_F085
Description
MOSFET P-CH 100V 6.6A DPAK-3
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FQD8P10TM_F085

Input Capacitance (ciss) @ Vds
470pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
530 mOhm @ 3.3A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQD8P10TM_F085FQD8P10TM-F085
Quantity:
5 000
Part Number:
FQD8P10TM_F085
Manufacturer:
FAIRCHILD
Quantity:
5 000
©2010 Fairchild Semiconductor Corporation
FQD8P10TM_F085 Rev. C1
FQD8P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -6.6A, -100V, R
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant
Typ
--
--
--
DS(on)
-55 to +150
Ratings
= 0.53
-26.4
-100
0.35
-6.6
-4.2
150
-6.6
-6.0
300
4.4
2.5
44
G
30
@V
Max
2.84
110
50
GS
D
S
December 2010
= -10 V
www.fairchildsemi.com
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A

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FQD8P10TM_F085 Summary of contents

Page 1

... JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FQD8P10TM_F085 Rev. C1 Features • -6.6A, -100V, R • Low gate charge ( typical 12 nC) • Low Crss ( typical 30 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 5.2mH -6.6A -25V ≤ -8.0A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature FQD8P10TM_F085 Rev 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -100 ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 900 800 C oss 700 C iss 600 500 400 C rss 300 200 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics FQD8P10TM_F085 Rev ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ Note : T = 25℃ ...

Page 4

... ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area FQD8P10TM_F085 Rev. C1 (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 7 6 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... -3mA -3mA Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V FQD8P10TM_F085 Rev. C1 Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQD8P10TM_F085 Rev DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQD8P10TM_F085 Rev. C1 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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