FCH25N60N Fairchild Semiconductor, FCH25N60N Datasheet

MOSFET N-CH 600V 25A TO-247

FCH25N60N

Manufacturer Part Number
FCH25N60N
Description
MOSFET N-CH 600V 25A TO-247
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCH25N60N

Input Capacitance (ciss) @ Vds
3352pF @ 100V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
126 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Power - Max
216W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.108 Ohms
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
25 A
Power Dissipation
216 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCH25N60N
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2011 Fairchild Semiconductor Corporation
FCH25N60N Rev. A2
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FCH25N60N
N-Channel MOSFET
600V, 25A, 0.126Ω
Features
• R
• Ultra Low Gate Charge ( Typ. Qg = 57nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 0.108Ω ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G
D
GS
S
= 10V, I
D
T
= 12.5A
C
= 25
Parameter
Parameter
Continuous (T
Continuous (T
Pulsed
(T
Derate above 25
TO-247
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
o
C
1
o
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
FCH25N60N
FCH25N60N
-55 to +150
1.72
600
±30
861
100
216
300
0.58
0.24
8.3
2.2
25
16
75
20
40
S
D
SupreMOS
January 2011
www.fairchildsemi.com
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FCH25N60N Summary of contents

Page 1

... Thermal Resistance, Case to Heat Sink (Typical) θCS R Thermal Resistance, Junction to Ambient θJA ©2011 Fairchild Semiconductor Corporation FCH25N60N Rev. A2 Description = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based tech- nologies ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 8.3A 25Ω, Starting T = 25° ≤ 25A, di/dt ≤ 200A/μs, V ≤ 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCH25N60N Rev unless otherwise noted C Package Reel Size TO247 - Test Conditions I = 1mA 0V,T ...

Page 3

... C oss iss rss 2 10 *Note 1MHz shorted iss oss rss 0 Drain-Source Voltage [V] DS FCH25N60N Rev. A2 Figure 2. Transfer Characteristics 100 10 μ s Pulse Test Figure 4. Body Diode Forward Voltage 100 10 = 10V V = 20V GS o *Note 0 Figure 6. Gate Charge Characteristics 100 600 150 C o -55 ...

Page 4

... 150 Single Pulse 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FCH25N60N Rev. A2 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 1mA D 0.0 100 150 200 -100 Figure 10. Maximum Drain Current 30 μ μ 100 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FCH25N60N Rev. A2 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCH25N60N Rev DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FCH25N60N Rev. A2 TO-247-3L 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCH25N60N Rev. A2 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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