BUK6240-75C,118 NXP Semiconductors, BUK6240-75C,118 Datasheet
BUK6240-75C,118
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BUK6240-75C,118 Summary of contents
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... BUK6240-75C N-channel TrenchMOS FET Rev. 1 — 27 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... see GS see Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET Min ≤ sup = Figure 13; Graphic symbol G mbb076 3 Typ ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 Figure Figure -55 175 -55 175 - Ω ...
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... Product data sheet 003aae880 P der (%) 150 200 ( ° Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6240-75C Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET Min Typ Max - - 2.52 003aae881 t P δ = ...
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... Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET Min Typ Max Unit 1.8 2.3 2.8 ...
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... Figure /dt = -100 A/µ 003aae870 (A) D Fig 6. 003aae872 = 25 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET Min Typ - 0 10.0 ( Output characteristics: drain current as a function of drain-source voltage; typical values 100 R DSon (m Ω ...
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... Product data sheet 003aad805 120 180 T (°C) j Fig 10. Sub-threshold drain current as a function of 003aae876 4.0 4.5 5.0 10 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET - ( min typ max - ...
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... Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae879 C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET (V) 8 14V 60V charge; typical values 30 ...
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... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET min 10.4 2.95 2.285 4.57 0.5 9.6 2 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6240-75C v.1 20101027 BUK6240-75C Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2010 BUK6240-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 27 October 2010 Document identifier: BUK6240-75C ...