BUK7Y10-30B,115 NXP Semiconductors, BUK7Y10-30B,115 Datasheet - Page 9

• Manufacturer Part Number: BUK7Y10-30B,115
• Description: MOSFET N-CH 30V 67A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y10-30B,115

• Input Capacitance (ciss) @ Vds: 1183pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 18.8nC @ 10V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5512-2

NXP Semiconductors
BUK7Y10-30B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
10
8
6
4
2
0
charge; typical values.
0
V
5
DS
= 14V
10
(A)
I
S
60
40
20
15
V
0
0.2
DS
All information provided in this document is subject to legal disclaimers.
Q
003aad626
= 24V
G
(nC)
20
0.4
Rev. 03 — 9 April 2010
T
j
= 175 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
(pF)
25 °C
C
10
10
10
10
0.8
4
3
2
10
as a function of drain-source voltage; typical
values.
-1
N-channel TrenchMOS standard level FET
V
003aad625
S D
(V)
1
1
BUK7Y10-30B
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aad627
C
C
C
(V)
iss
oss
rss
10
2
9 of 14