PSMN011-80YS,115 NXP Semiconductors, PSMN011-80YS,115 Datasheet - Page 15

• Manufacturer Part Number: PSMN011-80YS,115
• Description: MOSFET N-CH 80V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS,115

• Input Capacitance (ciss) @ Vds: 2800pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 117 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5577-2

NXP Semiconductors
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
PSMN011-80YS
Document identifier: PSMN011-80YS
Date of release: 28 October 2010
All rights reserved.