BUK654R8-40C,127 NXP Semiconductors, BUK654R8-40C,127 Datasheet - Page 11
![MOSFET N-CH TRENCH SOT78A](/photos/16/7/160729/to220ab_sml.jpg)
BUK654R8-40C,127
Manufacturer Part Number
BUK654R8-40C,127
Description
MOSFET N-CH TRENCH SOT78A
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK654R8-40C127.pdf
(14 pages)
Specifications of BUK654R8-40C,127
Input Capacitance (ciss) @ Vds
5200pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
88nC @ 10V
Power - Max
158W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
158 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
8. Revision history
Table 7.
BUK654R8-40C
Product data sheet
Document ID
BUK654R8-40C v.3
Modifications:
BUK654R8-40C v.2
Revision history
Release date
20101012
20100521
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 12 October 2010
Data sheet status
Product data sheet
Objective data sheet
N-channel TrenchMOS intermediate level FET
Change notice
-
-
BUK654R8-40C
Supersedes
BUK654R8-40C v.2
BUK654R8-40C v.1
© NXP B.V. 2010. All rights reserved.
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