BUK6610-75C,118 NXP Semiconductors, BUK6610-75C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK6610-75C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6610-75C,118

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 78A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 78 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6610-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
120
100
I
fs
150
D
120
80
60
40
20
90
60
30
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
T
j
= 175 °C
2
40
…continued
60
T
j
= 25 °C
4
80
V
All information provided in this document is subject to legal disclaimers.
GS
003aae812
003aae411
I
D
(V)
(A)
Rev. 02 — 14 October 2010
100
Conditions
I
see
I
V
6
S
S
GS
= 25 A; V
= 20 A; dI
Figure 15
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(mΩ)
DSon
(A)
160
I
120
D
80
40
40
30
20
10
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
j
= 25 °C;
V
GS
5
1
(V) = 10
BUK6610-75C
Min
-
-
-
N-channel TrenchMOS FET
10
2
6.0
5.0
Typ
0.8
50.5
105
15
3
© NXP B.V. 2010. All rights reserved.
V
003aae814
003aae811
V
GS
DS
Max
1.2
-
-
(V)
(V)
4.5
4.0
3.8
3.6
3.4
3.2
20
4
Unit
V
ns
nC
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