IRF9392TRPBF International Rectifier, IRF9392TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9392TRPBF
• Description: MOSFET P-CH 30V 9.8A 8SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9392TRPBF

• Input Capacitance (ciss) @ Vds: 1270pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.1 mOhm @ 7.8A, 20V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.8A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: - 9.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14. Maximum Avalanche Energy vs. Drain Current

‚
500
400
300
200
100
+
Fig 12. On-Resistance vs. Gate Voltage
-
50
40
30
20
10
0
0
25
0
D.U.T
Starting T J , Junction Temperature (°C)
-V GS, Gate -to -Source Voltage (V)
Fig 16.
*
50
5
ƒ
+
-
•
•
•
•
SD
10
75
•
•
•
T J = 25°C
100
15
T J = 125°C
-
TOP
BOTTOM -7.8A
G
„
I D = -9.8A
125
+
20
I D
-2.0A
-2.8A
150
+
-
25
Re-Applied
Voltage
Reverse
Recovery
Current
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
1000
800
600
400
200
P.W.
SD
DS
50
40
30
20
10
0
0
Waveform
Waveform
1E-5
Fig 15. Typical Power vs. Time
0
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
10
Vgs = -4.5V
1E-4
Diode Recovery
Current
20
dv/dt
-I D , Drain Current (A)
Forward Drop
Vgs = -10V
di/dt
30
1E-3
®
Time (sec)
Power MOSFETs
D =
40
Period
1E-2
P.W.
50
60
1E-1
V
V
I
SD
GS
DD
=10V
70
1E+0
80
5