IRF9332PBF International Rectifier, IRF9332PBF Datasheet
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Manufacturer Part Number
IRF9332PBF
Description
MOSFET P-CH 30V 9.8A 8SOIC
Manufacturer
International Rectifier
Specifications of IRF9332PBF
Input Capacitance (ciss) @ Vds
1270pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.5 mOhm @ 9.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.8A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
13600µohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
28.1 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 9.8 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Notes through
www.irf.com
Features and Benefits
Applications
•
•
V
V
I
I
I
P
P
T
T
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Absolute Maximum Ratings
Orderable part number
IRF9332PbF
IRF9332TRPbF
D
D
DM
J
STG
DS
GS
D
D
@ T
@ T
@T
@T
(@V
(@V
(@T
A
A
A
A
R
R
= 25°C
= 70°C
Q
= 25°C
= 70°C
DS(on) max
DS(on) max
GS
g (typical)
GS
A
V
I
= 25°C)
DS
= -4.5V)
D
= -10V)
are on page 2
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
17.5
28.1
-9.8
-30
14
Package Type
SO8
SO8
f
f
mΩ
mΩ
nC
Parameter
V
A
GS
GS
@ -10V
@ -10V
Tape and Reel
Tube/Bulk
Form
*
6
6
6
Standard Pack
results in
⇒
Quantity
-55 to + 150
4000
'
'
'
'
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
HEXFET
95
Max.
IRF9332PbF
0.02
-9.8
-7.8
-30
±20
-80
2.5
1.6
®
Power MOSFET
SO-8
Note
09/01/2010
Units
W/°C
°C
W
V
A
1
Related parts for IRF9332PBF
IRF9332PBF Summary of contents
... mΩ 6 mΩ results in Standard Pack Form SO8 Tube/Bulk SO8 Tape and Reel Parameter @ -10V GS @ -10V IRF9332PbF ® HEXFET Power MOSFET ' ' ' ' SO-8 Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier ⇒ Note Quantity 95 4000 Max. Units -30 V ±20 -9.8 -7.8 A -80 2 ...
Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R DS(on) Static Drain-to-Source On-Resistance V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...
PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° ...
150° 25°C 10 1.0 0.3 0.5 0.7 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 T A ...
25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 500 400 300 200 100 Starting Junction ...
DUT 20K S Fig 17a. Gate Charge Test Circuit D.U DRIVER -V -20V GS 0.01 Ω Fig 18a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig ...
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... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. ...
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