AUIRFR4105Z International Rectifier, AUIRFR4105Z Datasheet

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AUIRFR4105Z

Manufacturer Part Number
AUIRFR4105Z
Description
MOSFET N-CH 55V 30A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRFR4105Z

Input Capacitance (ciss) @ Vds
740pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24.5 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Power - Max
48W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRFR4105Z
Manufacturer:
IR
Quantity:
12 500
HEXFET
*Qualification standards can be found at http://www.irf.com/
Features
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Thermal Resistance
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
JA
JA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
(tested )
C
C
C
®
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
j
Ã
AUTOMOTIVE GRADE
Parameter
Parameter
GS
GS
g
@ 10V
@ 10V
i
G
h
Gate
d
G
D
S
AUIRFR4105Z
D-Pak
V
R
I
HEXFET
D
(BR)DSS
DS(on)
See Fig.12a, 12b, 15, 16
Typ.
–––
–––
–––
10 lbf
AUIRFR4105Z
AUIRFU4105Z
Drain
-55 to + 175
D
y
Max.
in (1.1N
max.
0.32
300
®
AUIRFU4105Z
120
± 20
30
21
48
29
46
Power MOSFET
I-Pak
y
m)
Max.
3.12
110
50
24.5m
PD - 97544
Source
55V
30A
S
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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AUIRFR4105Z Summary of contents

Page 1

... International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE D-Pak AUIRFR4105Z G Gate Parameter @ 10V GS @ 10V Parameter 97544 AUIRFR4105Z AUIRFU4105Z ® HEXFET Power MOSFET 55V (BR)DSS max. 24.5m DS(on) 30A D I-Pak AUIRFU4105Z D S Drain Source Max. Units 120 ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25°C ...

Page 5

0V MHZ C iss = SHORTED C rss = C gd 1000 C oss = 800 Ciss 600 400 Coss ...

Page 6

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 8

Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 30 TOP Single Pulse BOTTOM 1% Duty Cycle 18A ...

Page 9

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 10

D-Pak Part Marking Information 10 www.irf.com ...

Page 11

I-Pak Part Marking Information www.irf.com 11 ...

Page 12

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 13

... Ordering Information Base part Package Type AUIRFR4105Z Dpak AUIRFU4105Z Ipak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 75 Complete Part Number AUIRFR4105Z AUIRFR4105ZTR AUIRFR4105ZTRL AUIRFR4105ZTRR AUIRFU4105Z 13 ...

Page 14

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

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