AUIRFR2307ZTRL International Rectifier, AUIRFR2307ZTRL Datasheet

AUIRFR2307ZTRL

Manufacturer Part Number

AUIRFR2307ZTRL

Description

MOSFET N-CH 75V 53A DPAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRFR2307ZTRL.pdf (13 pages)

Specifications of AUIRFR2307ZTRL

Input Capacitance (ciss) @ Vds

2190pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

16 mOhm @ 32A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

42A

Vgs(th) (max) @ Id

4V @ 100µA

Gate Charge (qg) @ Vgs

75nC @ 10V

Power - Max

110W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

●

Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive ava-

lanche rating . These features combine to make this

design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of

other applications.

HEXFET

*Qualification standards can be found at http://www.irf.com/

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

www.irf.com

Thermal Resistance

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE GRADE

@ 10V

(Silicon Limited)

(Package Limited)

Gate

AUIRFR2307Z

HEXFET

AUIRFR2307Z

See Fig.12a, 12b, 15, 16

Typ.

–––

D-Pak

D (Silicon Limited)

D (Package Limited)

(BR)DSS

DS(on)

Drain

-55 to + 175

Max.

0.70

210

110

± 20

100

140

300

Power MOSFET

max.

Max.

1.42

110

PD - 97546

Source

16m

53A

42A

75V

Units

W/°C

°C/W

°C

Related parts for AUIRFR2307ZTRL

AUIRFR2307ZTRL Summary of contents

Page 1

... T STG Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance j R Junction-to-Case JC R Junction-to-Ambient (PCB mount Junction-to-Ambient JA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE AUIRFR2307Z Gate Parameter @ 10V (Silicon Limited 10V GS @ 10V ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 100 6.0V 5.5V 5.0V BOTTOM 4. 4.5V 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 5

0V, C iss = SHORTED C rss = oss = 3000 C iss 2000 1000 C oss C rss 0 ...

Page 6

LIMITED BY PACKAGE 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 8

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 120 TOP Single Pulse BOTTOM 1% Duty Cycle 100 32A ...

Page 9

D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 10

D-Pak Part Marking Information 10 www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

... Ordering Information Base part Package Type AUIRFR2307Z Dpak 12 Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Complete Part Number AUIRFR2307Z AUIRFR2307ZTR AUIRFR2307ZTRL AUIRFR2307ZTRR www.irf.com ...

Page 13

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and ...

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