AUIRFR5410 International Rectifier, AUIRFR5410 Datasheet - Page 4

• Manufacturer Part Number: AUIRFR5410
• Description: MOSFET P-CH 100V 13A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR5410

• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Power - Max: 66W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -13A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 0.205ohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 66W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 205 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 66 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 38.7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
0.01
100
0.1
100
0.1
10
10
1
1
0.1
4
TOP
BOTTOM
-V
-V
5
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6
1
-4.5V
7
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
DS
10
8
= 10V
T = 25 C
J
°
T = 150 C
J
9
°
°
100
10
100
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-14A
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
1
20
40
-4.5V
60
20µs PULSE WIDTH
T = 150 C
J
www.irf.com
80 100 120 140 160
10
°
V
°
GS
=
-10V
100