AUIRFU4104 International Rectifier, AUIRFU4104 Datasheet - Page 5

• Manufacturer Part Number: AUIRFU4104
• Description: MOSFET N-CH 40V 42A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFU4104

• Input Capacitance (ciss) @ Vds: 2950pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 4.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: I-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 59 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000.0
100.0
5000
4000
3000
2000
1000
10.0
1.0
0.1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-toDrain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Coss
Ciss
Crss
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
10000
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
1
20
16
12
8
4
0
0
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 42A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
40
V DS = 32V
VDS= 20V
10
60
100µsec
1msec
10msec
100
80
1000
5
100