IRFH5104TRPBF International Rectifier, IRFH5104TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5104TRPBF
• Description: MOSFET N-CH 40V 24A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5104TRPBF

• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN Exposed Pad
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 114 W
• Gate Charge Qg: 53 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
150
125
100
100
1.0
75
50
25
10
0.001
0
Fig 9. Maximum Drain Current vs.
0.01
0.1
25
0.2
10
1E-006
1
Case (Bottom) Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
V SD , Source-to-Drain Voltage (V)
D = 0.50
50
T C , Case Temperature (°C)
0.01
0.20
0.02
0.10
0.05
T J = 150°C
0.6
75
Limited By Package
SINGLE PULSE
( THERMAL RESPONSE )
0.8
1E-005
T J = 25°C
100
1.0
V GS = 0V
125
1.2
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
1.4
Fig 10. Threshold Voltage vs. Temperature
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
10
Fig 8. Maximum Safe Operating Area
0.001
1
-75 -50 -25
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 100µA
I D = 500µA
I D = 1.0mA
I D = 1.0A
V DS , Drain-to-Source Voltage (V)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
T J , Temperature ( °C )
10msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1
0.01
25
DC
1msec
50
75 100 125 150
100µsec
10
www.irf.com
0.1
100