AUIRF540ZS International Rectifier, AUIRF540ZS Datasheet - Page 12

• Manufacturer Part Number: AUIRF540ZS
• Description: MOSFET N-CH 100V 36A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF540ZS

• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Power - Max: 92W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 26.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 36 A
• Power Dissipation: 92 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
„
D
Notes:
12
from 0 to 80% V
2
Repetitive rating; pulse width limited by
Pulse width
C
R
recommended for use above this value.
same charging time as C
max. junction temperature. (See fig. 11).
Limited by T
Pak Tape & Reel Infomation
oss
G
= 25 , I
eff. is a fixed capacitance that gives the
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AS
TRR
Jmax
TRL
1.0ms; duty cycle
= 20A, V
DSS
, starting T
.
330.00
(14.173)
MAX.
GS
oss
1.85 (.073)
1.65 (.065)
=10V. Part not
J
while V
= 25°C, L = 0.46mH
10.90 (.429)
10.70 (.421)
13.50 (.532)
12.80 (.504)
2%.
DS
is rising
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
…
†
‡
ˆ
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
This is only applied to TO-220AB pakcage.
This is applied to D
Limited by T
This value determined from sample failure population
avalanche performance.
starting T
16.10 (.634)
15.90 (.626)
11.60 (.457)
11.40 (.449)
J
1.75 (.069)
1.25 (.049)
= 25°C, L = 0.46mH R
1.60 (.063)
1.50 (.059)
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
2
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
Pak, when mounted on 1" square PCB (FR-
15.42 (.609)
15.22 (.601)
4
3
G
30.40 (1.197)
= 25 , I
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
4
MIN.
AS
www.irf.com
= 20A, V
GS
=10V.