AUIRF1010EZSTRL International Rectifier, AUIRF1010EZSTRL Datasheet

AUIRF1010EZSTRL

Manufacturer Part Number

AUIRF1010EZSTRL

Description

MOSFET N-CH 60V 84A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF1010EZ.pdf (15 pages)

Specifications of AUIRF1010EZSTRL

Input Capacitance (ciss) @ Vds

2810pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

8.5 mOhm @ 51A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

86nC @ 10V

Power - Max

140W

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 leads + Tab), TO-263AB

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Absolute Maximum Ratings

specifications is not implied.

Description

Features

Specifically designed for Automotive applications, this

HEXFET

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating . These features combine to make

this design an extremely efficient and reliable device for use

in Automotive applications and a wide variety of other appli-

cations.

HEXFET

*Qualification standards can be found at http://www.irf.com/

Thermal Resistance

www.irf.com

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(tested)

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Maximum Power Dissipation

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest processing

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

functional operation of the device at these or any other condition beyond those indicated in the

AUTOMOTIVE GRADE

Parameter

@ 10V (Silicon Limited)

@ 10V (Package Limited)

AUIRF1010EZ

TO-220AB

Gate

D (Silicon Limited)

D (Package Limited)

(BR)DSS

DS(on)

AUIRF1010EZS

HEXFET

See Fig.12a,12b,15,16

10 lbf•in (1.1N•m)

Typ.

0.50

–––

AUIRF1010EZS

Pak

AUIRF1010EZL

-55 to + 175

Drain

max.

AUIRF1010EZ

Max.

0.90

300

340

140

± 20

180

Power MOSFET

Max.

1.11

–––

AUIRF1010EZL

8.5mΩ

PD - 95962

TO-262

Source

84A

75A

60V

Units

W/°C

°C/W

°C

Related parts for AUIRF1010EZSTRL

AUIRF1010EZSTRL Summary of contents

Page 1

... Mounting torque, 6- screw Thermal Resistance k R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA R Junction-to-Ambient (PCB Mount, steady state) θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE (Silicon Limited (Package Limited ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient ––– DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 1000 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 1 4.5V 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T ...

Page 5

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 6

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 ...

Page 7

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 8

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 100 TOP Single Pulse BOTTOM 1% Duty Cycle 51A ...

Page 9

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. ...

Page 10

10 www.irf.com ...

Page 11

2 2 www.irf.com 11 ...

Page 12

TO-262 Package Outline ( TO-262 Part Marking Information 12 Dimensions are shown in millimeters (inches)) www.irf.com ...

Page 13

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

Page 14

... Ordering Information Base part Package Type AUIRF1010EZ TO-220 AUIRF1010EZL TO-262 AUIRF1010EZS D2Pak 14 Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRF1010EZ AUIRF1010EZL AUIRF1010EZS AUIRF1010EZSTRL AUIRF1010EZSTRR www.irf.com ...

Page 15

... IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

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