AUIRF4104STRR International Rectifier, AUIRF4104STRR Datasheet

AUIRF4104STRR

Manufacturer Part Number

AUIRF4104STRR

Description

MOSFET N-CH 40V 75A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF4104.pdf (15 pages)

Specifications of AUIRF4104STRR

Input Capacitance (ciss) @ Vds

3000pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

5.5 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

100nC @ 10V

Power - Max

140W

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 leads + Tab), TO-263AB

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

Specifically designed for Automotive applications, this

HEXFET

ing techniques to achieve extremely low on-resistance

per silicon area. Additional features of this design are

a 175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating . These

features combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;

and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings

are measured under board mounted and still air conditions. Ambient temperature (T

Features

HEXFET

*Qualification standards can be found at http://www.irf.com/

Thermal Resistance

www.irf.com

STG

θJC

θCS

θJA

@ T

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(tested )

= 25°C

= 100°C Continuous Drain Current, VGS @ 10V

= 25°C

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest process-

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient (PCB Mount)

Parameter

AUTOMOTIVE GRADE

@ 10V

@ 10V (Wire Bond Limited)

AUIRF4104

TO-220AB

) is 25°C, unless otherwise specified.

Note to ‰ are on page 3

HEXFET

See Fig.12a, 12b, 15, 16

300 (1.6mm from case )

Typ.

0.50

–––

10 lbf

D (Silicon Limited)

D (Package Limited)

(BR)DSS

DS(on)

-55 to + 175

AUIRF4104S

120

Max.

in (1.1N

0.95

± 20

470

140

120

220

AUIRF4104

Power MOSFET

AUIRF4104S

typ.

max.

Max.

1.05

–––

Pak

PD - 97471A

120A

4.3mΩ

5.5mΩ

75A

40V

Units

W/°C

°C/W

°C

Related parts for AUIRF4104STRR

AUIRF4104STRR Summary of contents

Page 1

... Thermal Resistance i Junction-to-Case R θJC Case-to-Sink, Flat Greased Surface R θCS Junction-to-Ambient (PCB Mount) R θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE G TO-220AB AUIRF4104 ) is 25°C, unless otherwise specified. A Parameter @ 10V GS @ 10V (Wire Bond Limited) ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited starting T = ...

Page 4

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 15V 20μs PULSE WIDTH 1 ...

Page 5

0V MHZ C iss = SHORTED C rss = C gd 4000 C oss = Ciss 3000 2000 Coss 1000 ...

Page 6

LIMITED BY PACKAGE 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 ...

Page 7

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 8

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP Single Pulse BOTTOM 1% Duty Cycle 120 75A 100 ...

Page 9

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. ...

Page 10

10 www.irf.com ...

Page 11

2 2 www.irf.com 11 ...

Page 12

D Pak Tape & Reel Infomation TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. TO-220AB package ...

Page 13

... Ordering Information Base part number Package Type AUIRF4104 TO-220 AUIRF4104S D2Pak AUIRF4104S AUIRF4104S www.irf.com Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRF4104 AUIRF4104S AUIRF4104STRL AUIRF4104STRR 13 ...

Page 14

... IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

Page 15

Revision History Date 2/5/2010 Revised with new AU template: 1)Add sentence below Absolute Max Rating 2)Update ESD by using ESD data and table from Anika 3)Update Part Marking drawing 4) Add Order Info table 5) Add Revision History www.irf.com Comments ...

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